Static and pulsed IV measurements provided by MC2 Technologies are perfectly adapted to characterize FET, bipolar transistors or diodes used for linear or nonlinear applications (LNA, PA, DC/DC converters…). IV measurements under pulsed conditions are well suited to analyze thermal and trapping effects as well as for electrical modelling.
- Up to 200V-4A – Pulse width down to 200ns
- Up to 600V-20A – Pulse width down to 1µs
- Up to 1000V-20A – Pulse width down to 1µs
- Up to 1000V-5A
Example of a ID(VD,VG) characteristics of GaN FET measured under pulsed condition up to 600V and 20A