Static and Pulsed IV


Static and pulsed IV measurements provided by MC2-Technologies are perfectly adapted to characterize FET, bipolar transistors or diodes used for linear or non linear applications (LNA, PA, DC/DC converters…). IV measurements under pulsed conditions are well suitable to analyse thermal and traps effects but also for electrical modelling.

Pulsed IV

  • Up to 200V-4A – Pulse width down to 200ns
  • Up to 600V-20A – Pulse width down to 1µs
  • Up to 1000V-20A – Pulse width down to 1µs

Static IV

  • Up to 1000V-5A

Example of a ID(VD,VG) characteristics of GaN FET measured under pulsed condition up to 600V and 20A