| • FET and bipolar based devices and circuit model : Si, GaAs, InP, GaN, SiC, Ge, … • Different types of model: Electrical Equivalent Scheme, Empirical, Neuron based, Black Box, User defined, … • Scalable model (total width and number of fingers) • Models available up to 220GHz • Models for on wafer or test fixture devices • Temperature and self-heating dependant • Dispersive and memory effects • High linearity NL models |
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Comparison between extrinsic measurements and simulations and intensic load lines corresponding of GaN power device at 4 GHz
