| • Models for passive and active structures • FET and bipolar based devices and circuit model : Si, GaAs, InP, GaN, SiC, Ge, … • Dispersive and memory effects • Noise description (up to 40GHz and at 60GHz and 94GHz) • Temperature and self-heating dependant • Scalable model (total width and number of fingers) • Model for on wafer or test fixture devices • Different available formats (ADS, verilog, user defined) |
|
|
|
