• Temperature range 230-500 K

• 8 setups following the frequency range and the matching techniques (active or passive)

Frequency domain

• CW 500 MHz up to 110 GHz

• Pulsed 500 MHz up to 50 GHz
- pulse profile
- fix profile

• Modulated signal 500 MHz up to 40 GHz

Time domain

• CW 500 MHz up to 50 GHz

• RF signal aggression

• Measurement analysis and reverse engineering (passive and active devices, MMIC, systems, RF MEMS,…)

Output power, power added efficiency and power gain at 10 GHz of AlGaN/GaN device under probes

Output power mW versus load impedance at 40 GHz

of PHEMT device

Output power and power gain of a GaAs MMIC at
94 GHz