• Temperature range 230-500 K

• 10 VNA following the frequency range
- CW 30 kHZ up to 220 GHz
- Pulsed Sij 45 MHz up to 50 GHz

• Pulsed I(V) (200V - 4A)
- Thermal effects, lay effects, access resistance

• 4 port vector measurements (true differential)

• Breakdown analyses
- Diode configuration, transistor configuration (open and close channel)

• Reliability

• Thermal mapping measurements

PHEMT gate current in transistor configuration at open and closed channel

4 ports VNA (true differential measurement) 

Pulsed I(V) SiC MESFET 16*150*1μm²